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2SD1007 HQ Datasheet
Datasheet specifications
| Datasheet's name | 2SD1007 HQ |
|---|---|
| File size | 84.822 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet 2SD1007 HQ |
Download Datasheet |
|---|
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Guangdong Hottech 2SD1007 HQ
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 700mA
- Power Dissipation (Pd): 2W
- Transition Frequency (fT): 90MHz
- DC Current Gain (hFE@Ic,Vce): 135@1mA,5V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 120V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@500mA,50mA
- Package: SOT-89
- Manufacturer: Guangdong Hottech